? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 340 2 sot-23 w (sot-23 field effect transistors) n n n n -channel -channel -channel -channel enhancement-mode enhancement-mode enhancement-mode enhancement-mode mos mos mos mos fets fets fets fets n n n n ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss 30 v gate - source voltage ? O - ? O? v gs + 12 v drain current (continuous) ? O - Bm i d 4 a drain current (pulsed) ? O - i dm 15 a total device dissipation ? t a = 25 h?? 25 p d 1 25 0 m w junct io n Y t j 150 storage temperature ? t stg -55to+15 0 device device device device marking marking marking marking gm gm gm gm 340 340 340 340 2 2 2 2 = = = = b b b b 2 2 2 2
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 340 2 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 3 0 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v g s ( th ) 0. 6 2 v diode forward voltage drop ? O ( i s = 1 a, v gs =0 v ) v sd 1 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = 24v ) (v gs = 0 v, v ds = 24v , t a = 5 5 ) i dss 1 5 u a gate body leakage ? O ? (v gs = + 12 v, v ds = 0 v) i gss + 100 n a static drain-source on-state resistance ??? ? ( i d = 4 a, v gs = 10 v ) r ds ( on ) 45 55 m static drain-source on-state resistance ??? ? ( i d = 3 a, v gs = 4. 5v ) r ds ( on ) 55 70 m static drain-source on-state resistance ??? ? ( i d = 2 a, v gs = 2.5 v ) r ds ( on ) 83 110 m input capacitance ? (v gs = 1 0 v, v ds = 15 v, f=1 mhz) c iss 235 pf output capacitance ? (v gs = 1 0 v, v ds = 15 v, f=1 mhz) c oss 3 5 pf turn-on time rg (v ds = 15 v, v g s = 10 v, r gen = 6 ) t (on) 3.5 ns turn-off time ? rg (v ds = 15 v, v g s = 10 v, r gen = 6 ) t (off) 17.5 ns pulse width < 300 s; duty cycle < 2.0%
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